2001-12-04 page 1 SDP10S30, sdb10s30 sdt10s30 preliminary data silicon carbide schottky diode revolutionary semiconductor material - silicon carbide switching behavior benchmark no reverse recovery no temperature influence on the switching behavior no forward recovery product summary v rrm 300 v q c 23 nc i f 10 a p-to220-2-2. p-to220-3-1. p-to220-3.smd pin 1 pin 2 pin 3 n.c. c a n.c. c a marking d10s30 d10s30 d10s30 type package ordering code SDP10S30 p-to220-3-1. q67040-s4372 sdb10s30 p-to220-3.smd q67040-s4373 sdt10s30 p-to220-2-2. q67040-s4447 c a maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous forward current, t c =100c i f 10 a rms forward current , f =50 hz i frms 14 surge non repetitive forward current, sine halfwave t c =25c, t p =10ms i fsm 36 repetitive peak forward current t j =150c, t c =100c, d =0.1 i frm 45 non repetitive peak forward current t p =10s, t c =25c i fmax 100 i 2 t value , t c =25c, t p =10ms i 2 d t 6.5 a2s repetitive peak reverse voltage v rrm 300 v surge peak reverse voltage v rsm 300 power dissipation , t c =25c p tot 65 w operating and storage temperature t j , t stg -55... +175 c
2001-12-04 page 2 SDP10S30, sdb10s30 sdt10s30 preliminary data thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 2.3 k/w smd version, device on pcb: p-to263-3-2: @ min. footprint p-to263-3-2: @ 6 cm 2 cooling area 1) r thja - - - 35 62 - electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics diode forward voltage i f =10a, t j =25c i f =10a, t j =150c v f - - 1.5 1.5 1.7 1.9 v reverse current v r =300v, t j =25c v r =300v, t j =150c i r - - 15 20 200 1000 a 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2001-12-04 page 3 SDP10S30, sdb10s30 sdt10s30 preliminary data electrical characteristics ,at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics total capacitive charge 1) v r =200v, i f =10a, d i f /d t =-200a/s, t j =150c q c - 23 - nc switching time 2) v r =200v, i f =10a, d i f /d t =-200a/s, t j =150c t rr - n.a. - ns total capacitance v r =0v, t c =25c, f =1mhz v r =150v, t c =25c, f =1mhz v r =300v, t c =25c, f =1mhz c - - - 600 55 40 - - - pf
2001-12-04 page 4 SDP10S30, sdb10s30 sdt10s30 preliminary data 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 c 180 t c 0 5 10 15 20 25 30 35 40 45 50 55 60 w 70 p tot 2 diode forward current i f = f ( t c ) parameter: t j 175 c 0 20 40 60 80 100 120 140 c 180 t c 0 1 2 3 4 5 6 7 8 9 a 11 i f 4 typ. forward power dissipation vs. average forward current p f(av) = f ( i f ) t c =100c, d = t p / t 0 2 4 6 8 10 12 14 a 18 i f(av) 0 4 8 12 16 20 24 w 32 p f(av) d=1 d=0.5 d=0.2 d=0.1 3 typ. forward characteristic i f = f ( v f ) parameter: t j , t p = 350 s 0.6 0.8 1 1.2 1.4 1.6 1.8 v 2.2 v f 0 2 4 6 8 10 12 14 16 a 20 i f -40c 25c 100c 125c 150c
2001-12-04 page 5 SDP10S30, sdb10s30 sdt10s30 preliminary data 5 typ. reverse current vs. reverse voltage i r = f ( v r ) 50 100 150 200 v 300 v r -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 a i r 150c 125c 100c 25c 6 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w SDP10S30 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 7 typ. capacitance vs. reverse voltage c = f ( v r ) parameter: t c = 25 c, f = 1 mhz 10 0 10 1 10 2 10 3 v v r 0 50 100 150 200 250 300 350 pf 450 c 8 typ. c stored energy e c = f ( v r ) 0 50 100 150 200 v 300 v r 0 0.5 1 1.5 j 2.5 e c
2001-12-04 page 6 SDP10S30, sdb10s30 sdt10s30 preliminary data 9 typ. capacitive charge vs. current slop e q c = f ( d i f /d t ) parameter: t j = 150 c 100 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 2 4 6 8 10 12 14 16 18 nc 22 q c i f *0.5 i f i f *2
2001-12-04 page 7 SDP10S30, sdb10s30 sdt10s30 preliminary data p-to220-3-1 symbol [mm] [inch] minmaxminmax a 9.70 10.30 0.3819 0.4055 b 14.88 15.95 0.5858 0.6280 c 0.65 0.86 0.0256 0.0339 d 3.55 3.89 0.1398 0.1531 e 2.60 3.00 0.1024 0.1181 f 6.00 6.80 0.2362 0.2677 g 13.00 14.00 0.5118 0.5512 h 4.35 4.75 0.1713 0.1870 k 0.38 0.65 0.0150 0.0256 l 0.95 1.32 0.0374 0.0520 m n 4.30 4.50 0.1693 0.1772 p 1.17 1.40 0.0461 0.0551 t 2.30 2.72 0.0906 0.1071 2.54 typ. 0.1 typ. dimensions p-to220-3-1 symbol [mm] [inch] minmaxminmax a 9.80 10.00 0.3858 0.3937 b c 1.25 1.75 0.0492 0.0689 d 0.95 1.15 0.0374 0.0453 e f 0.72 0.85 0.0283 0.0335 g h 4.30 4.50 0.1693 0.1772 k 1.28 1.40 0.0504 0.0551 l 9.00 9.40 0.3543 0.3701 m 2.30 2.50 0.0906 0.0984 n p 0.00 0.20 0.0000 0.0079 q 3.30 3.90 0.1299 0.1535 r s 1.70 2.50 0.0669 0.0984 t 0.50 0.65 0.0197 0.0256 u v w x y z 9.40 typ. 0.3701 typ. 16.15 typ. 0.6358 typ. 6.43 typ. 0.2532 typ. 4.60 typ. 0.1811 typ. 10.8 typ. 0.4252 typ. 1.35 typ. 0.0532 typ. 14.1 typ. 0.5551 typ. 8 max 8 ma x dimensions 2.54 typ. 0.1 typ. 5.08 typ. 0.2 typ. 1.3 typ. 0.0512 typ. to-220-3-45 (p-to220smd)
2001-12-04 page 8 SDP10S30, sdb10s30 sdt10s30 preliminary data max/min-dimensions are given in inches[mm]
2001-12-04 page 9 SDP10S30, sdb10s30 sdt10s30 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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